Paper Title
Investigating the Electrical Features of Hetero junctions: P-EUS and N-CDS Interface

Abstract
Two dissimilar materials brought into immediate contact to form a junction result into hetero junctions. SILAR (Successive Ionic Layer Adsorption and Reaction) substrates on the heterojunction of p-EuS/n-CdS formed on Fluorine doped tin oxide coated glass. Heterojunction characteristics current-voltage (I-V) are studied. The formed heterojunctions p-EuX (X=S, Se and O)/ n-CdS are applied in forward bias and in reverse bias, to determine I-V characteristics. The average ideality factor values n1 and n2 for and n3 for p-S/ n-CdS are found reported. Keywords - Heterojunctions, SILAR, p-EuS, n-Cds, I-V, Semiconductor