Paper Title
Impact of Heterojunction Variations & Metallic Drain on The Dual-Gate Tfets' Functioning

Abstract
In this research project, we introduce an innovative method to enhance the functioning of dual gate TFETs by integrating different hetero-materials at the source regions. Our 2D calibrated simulation studies demonstrate a remarkable improvement in ambipolar current suppression, achieving a reduction of approximately 12 orders of magnitude when a hetero-material source and a metallic drain are utilized & adjusting the gate voltage spanning between -1 V and 0 V, compared to conventional DG_TFETs. Additionally, our results show an enhanced subthreshold slope of 44 mV/decade (AV-SS) and current ratio between ON and OFF current (ION/IOFF) is 9.15 × 1012.The significant reduction in ambipolar current is ascribed to the reduced rate of BTBT, which is facilitated via the channel/drain interface creating a Schottky barrier. We also comprehensively examine the impact of various parameters on the functionality of the device. Our study indicates that optimal performance can be further attained by fine-tuning these parameters.This research highlights the potential for enhancing the efficiency and functionality of DG_TFETs through strategic hetero-material integration, providing valuable insights for the development of next-generation electronic devices. The abstract succinctly summarizes the key findings and implications of the study. Keywords - Shockley-Read-Hall, Tunnel Field-Effect Transistors