Paper Title
Investigation on Approaching Energy Band Diagram and Electrical Characteristics Based on ZnCdSe and ZnO for Light-Emitting Diodes

Abstract
This paper presents the numerical analysis for energy band diagrams includinghomojunction structure of light emitting diodes. This investigation is based on physical parameters of direct bandgap material: Zinc Cadmium Selenide (ZnCdSe) and Zinc Oxide (ZnO), II-VI compounds. This work is carried out from the experimental data of many literatures and theoretical data for the desirable research. The electrical properties such as the energy band gap with various temperature, density of states in conduction and valence bands, intrinsic carrier concentration with temperature, temperature dependence with intensity are accomplished for ZnCdSe and ZnO materials. The electrical characteristics (I-V curve) of Light Emitting Diodes (LEDs) based on ZnCdSe and ZnO are also analyzed in this paper.Simulation curves are done by software tool MATLAB. The band diagram design for p-ZnCdSe/n-ZnCdSe and p-ZnO/n-ZnO light-emitting diode confirmed the high quality LED for real applications.This research gives information for the researchers who study in optoelectronic semiconductors devices. Keywords - ZnCdSe, ZnO, Band gap Design, Luminous intensity, I-V Characteristic curve.