Paper Title
Performance Analysis of Double-Gate Staggered Heterojunction TFET Biosensor

Abstract
This study introduces a double-gate staggered heterojunction tunnel field-effect transistor (DG-SHJ-TFET) optimized for high-precision biosensing. The design features an InAsheterojunction pocket at the source-channel interface and a nanoscale cavity on the source side, which collectively improve band-to-band tunneling efficiency and overall sensor sensitivity.The study investigates the impact of biomolecule dielectric constants (εk = 1 to 12) and charge densities (neutral, positive, negative) on device electrostatics, including surface potential, energy band alignment, and drain current characteristics. Results demonstrate that increasing the dielectric constant (εk) improves sensitivity, with positively charged biomolecules exhibiting the highest response due to enhanced electric field effects. The device achieves 60× higher drain current sensitivity (SId), almost double the threshold voltage shift (ΔVth), and 12 times increase in ON-OFF current ratio sensitivity (Δ(Ion/Ioff)) compared to conventional FET-based biosensors, further optimizing performance. These findings highlight the potential as a highly sensitive, low-power biosensor for detecting biomolecules in medical diagnostics, environmental monitoring, and lab-on-chip applications. Keywords - DG-SHJ-TFET, Biosensor, Sensitivity