Paper Title
Fin FET Modelling and Simulation Studies

Abstract
Fin FETs have emerged as the dominant transistor architecture in advanced technology nodes due to their superior electrostatic control and scalability beyond the limits of planar MOSFETs. This paper presents a comprehensive modeling and simulation study of FinFET devices, covering analytical modeling, TCAD-based physical simulation, compact modeling for circuit design, and performance benchmarking. The study highlights the influence of fin geometry, gate work-function engineering, short-channel effects (SCEs), mobility degradation, and variability. Simulation results demonstrate improvements in sub threshold swing (SS), leakage current, and on-state performance compared to traditional planar MOSFETs. The findings serve as a reference for researchers working on device optimization and compact model development for nanoscale technology nodes. Keywords - Planar MOSFET, FinFET, TCAD modeling, fin geometry.