Paper Title
Low Wavelength Detection of Advanced Materials in Micro Scale

Abstract
Arsenic, Phosphorus, Antimonide material Alloys are doped with Cu, Ag, S, In, Au and Cd at different Annealing Temperatures from 900 to 1300 0C. Substrate depth is varied from 1 µm to 7 µm. concentration of dopants is increased from 7.28 to 9.78 per cm3. Annealing alters ductility, hardness and Physical properties of Alloys. Absorption coefficient is measured in both GaAs and InP and symmetry of all these properties is presented in Micro scale range of Advanced Semiconductor Alloys. Keywords - Advanced Material Alloys, Dopants, Annealing Temperatures, Substrate Depth, Concentration of Dopants and Physical Properties of Alloys.