Paper Title
Effect of Growth Rates on the Electrical Properties of GAAS Grown by MOCVD

Abstract
In this study, a detailed investigation was carried out on electrically active defects in GaAs so grown with different growth rates .Three samples grown by MOCVD with growth rates 20um/h,90um/h and 120um/h were investigated by using current -voltage (I-V), capacitance –voltage (C-V) and Deep level Transient Spectroscopy (DLTS) in the temperature range from 20k-450k . The malarial structure was grown on n-GaAs (100) substrate using metal organic chemical vapor deposition (MOCVD) and Ohmic contacts were formed on this structure by metallization process. The ideality factor values from I-V characteristics have been calculated for all samples and found that, Ideality factor decreases with increasing the temperature. It is also found that Values of Barrier height of GaAs materials increase as the temperature increases. The free carrier concentration were calculated to be ≈ 7.29 𝑥 1015 𝑐𝑚−3 , 9.79 𝑥 1016𝑐𝑚−3 and 2.28𝑥 1017 𝑐𝑚−3 for samples grown with growth rates 20um/h,90um/h and 120um/h , respectively. DLTS and Laplace –DLTS measurement shows two traps for each samples at reverse bias 1V.